AOS (Alpha and Omega Semiconductor) has introduced two new MOSFETs—the AONC40202 (25V) and AONC68816 (80V)—engineered specifically for AI server intermediate bus converter (IBC) DC-DC applications.

The devices feature a DFN 3.3x3.3 dual-side cooling + source-down package, solving critical challenges in high power density and thermal management. An integrated center-gate layout simplifies PCB routing and shortens gate driver paths, improving electrical performance and design flexibility.

Optimized top-clip design for exposed drain contacts maximizes dual-side cooling area, rapidly extracting heat and reducing device temperature to minimize thermal stress and power loss. Maximum top-side thermal resistance (Rthc-top) is just 0.9°C/W—a significant leap over traditional single-side cooling solutions.

The AONC40202 supports 405A continuous current with a 175°C maximum junction temperature, combined with AlphaSGT™ silicon technology to enhance thermal management, power density, and efficiency for high-power AI server environments.

Peter H. Wilson, AOS MOSFET Product Line Director, stated the new products combine innovative thermal packaging with advanced silicon to deliver complete solutions balancing power density, manufacturability, and reliability for AI power designs.

ICgoodFind: AOS's AI-optimized MOSFETs tackle high-power, high-heat challenges with dual-side cooling and source-down packaging—ideal for advancing AI server hardware.