Infineon IRF7726TRPBF: High-Performance Dual N-Channel MOSFET for Power Management Applications

The relentless pursuit of higher efficiency, greater power density, and enhanced thermal performance drives innovation in power management design. At the heart of many advanced solutions lies the power MOSFET, a critical component for switching and amplification. The Infineon IRF7726TRPBF stands out as a premier dual N-channel MOSFET engineered specifically to meet the rigorous demands of modern power applications.

This device integrates two high-performance MOSFETs in a single, compact PQFN 3.3x3.3mm package, making it an ideal choice for space-constrained applications like DC-DC converters in computing hardware, telecom infrastructure, and VRM modules. A key to its superior performance is the utilization of Infineon's advanced OptiMOS™ technology. This technology platform is renowned for achieving an exceptional balance between the lowest possible on-state resistance (R DS(on)) and low gate charge (Q G).

The IRF7726TRPBF boasts an impressively low maximum R DS(on) of just 2.6 mΩ at 10 V, significantly reducing conduction losses. This allows for more current to be handled with minimal voltage drop and heat generation, directly contributing to higher overall system efficiency. Furthermore, the low gate charge facilitates extremely fast switching speeds, which is crucial for high-frequency switch-mode power supplies (SMPS) where reducing switching losses is paramount for efficiency. The dual N-channel configuration is particularly advantageous for designing synchronous buck converter topologies, where one MOSFET acts as the control switch and the other as the synchronous rectifier.

The thermally enhanced package ensures excellent heat dissipation, enabling reliable operation under continuous load conditions. This combination of low R DS(on), fast switching capability, and robust thermal performance makes the IRF7726TRPBF a cornerstone component for designers aiming to push the boundaries of power density and energy efficiency.

ICGOOODFIND: The Infineon IRF7726TRPBF is a top-tier dual N-channel MOSFET that excels in power management by offering an outstanding blend of ultra-low on-resistance and fast switching characteristics, courtesy of OptiMOS™ technology. Its compact form factor and high efficiency make it an indispensable component for next-generation power conversion systems.

Keywords: OptiMOS™ Technology, Low R DS(on), Power Management, Dual N-Channel MOSFET, High-Frequency Switching.