Infineon ISO1H816G: High-Voltage, High-Speed Power MOSFET Driver for Industrial Applications

Release date:2025-10-29 Number of clicks:168

Infineon ISO1H816G: High-Voltage, High-Speed Power MOSFET Driver for Industrial Applications

In the rapidly evolving landscape of industrial electronics, the demand for robust, efficient, and reliable power switching solutions is paramount. The Infineon ISO1H816G stands out as a state-of-the-art high-voltage, high-speed power MOSFET driver engineered specifically to meet the rigorous demands of modern industrial applications. This driver integrates advanced functionalities that enhance system performance, safety, and power density.

A key feature of the ISO1H816G is its reinforced galvanic isolation, capable of withstanding isolation voltages up to 5660 VRMS. This is critical for protecting low-voltage control circuits from high-voltage transients and noise commonly found in industrial environments such as motor drives, solar inverters, and industrial power supplies. The isolation barrier ensures safe and reliable operation, which is essential for both equipment and operator safety.

The driver excels in delivering high-speed switching performance, with short propagation delays and minimal pulse-width distortion. This capability allows for precise control over power MOSFETs and IGBTs, enabling higher switching frequencies. Consequently, designers can reduce the size of magnetic components and filters, leading to more compact and cost-effective power systems without compromising efficiency.

Furthermore, the device offers a high peak output current of up to 2.5 A, facilitating rapid turn-on and turn-off of large power switches. This strong drive current minimizes switching losses, which is vital for improving overall system efficiency, particularly in high-frequency applications. The robust output stage is also designed to withstand negative voltage spikes, ensuring durability in harsh electrical conditions.

The integration of advanced protection features such as under-voltage lockout (UVLO) for both the primary and secondary sides enhances system reliability by preventing malfunction under insufficient supply voltage conditions. Its wide operating voltage range supports flexibility in various power architectures.

ICGOOODFIND: The Infineon ISO1H816G is a superior choice for industrial power systems, combining high-voltage isolation, high-speed switching, and robust protection to enable efficient, reliable, and compact designs.

Keywords: Galvanic Isolation, High-Speed Switching, Peak Output Current, Industrial Applications, Power MOSFET Driver.

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