Infineon IPP65R280E6: A High-Performance Superjunction MOSFET for Efficient Power Conversion
The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power semiconductor components. At the heart of many advanced switched-mode power supplies (SMPS), motor drives, and renewable energy inverters lies the power MOSFET. The Infineon IPP65R280E6 stands out as a premier superjunction (SJ) MOSFET engineered to meet these challenges, offering a compelling blend of low losses, high robustness, and superior switching performance.
This device is part of Infineon’s extensive CoolMOS™ E6 family, which is renowned for its exceptional efficiency. The superjunction technology is the key innovation behind its performance. Unlike traditional planar MOSFETs, the SJ structure enables a much lower specific on-state resistance (R DS(on)) for a given silicon area and breakdown voltage. The IPP65R280E6 is rated for 650 V and 9.5 A, featuring an ultra-low R DS(on) of just 280 mΩ at 25°C. This directly translates to reduced conduction losses, which is paramount for improving the full-load efficiency of any power conversion system.
However, efficiency is not only about conduction. In high-frequency switching applications, switching losses often become the dominant factor. The IPP65R280E6 excels here as well. Its advanced cell structure and optimized internal packaging ensure excellent switching behavior and low gate charge (Q G). This results in faster turn-on and turn-off times, minimizing the time spent in the high-loss transition region and thereby reducing overall switching losses. This allows designers to push switching frequencies higher, which in turn enables the use of smaller passive components like magnetics and capacitors, leading to more compact and lighter end products.
Beyond pure performance metrics, reliability is non-negotiable. The IPP65R280E6 is designed with a high level of ruggedness. It offers a wide reverse bias safe operating area (RBSOA) and high avalanche ruggedness, providing a critical safety margin against voltage spikes and unpredictable transient events commonly encountered in real-world applications. This inherent robustness enhances system-level reliability and reduces the need for excessive over-design in clamping circuits.
Housed in a TO-220 FullPAK package, this MOSFET also offers superior cooling performance. The package is designed for isolation, and the leads are fully isolated from the mounting tab, simplifying the assembly process and improving thermal management by allowing direct attachment to a heatsink without an insulating washer.
ICGOOODFIND: The Infineon IPP65R280E6 is a benchmark superjunction MOSFET that effectively balances ultra-low conduction losses with exceptional switching performance and application robustness. It is an ideal choice for designers aiming to achieve peak efficiency in high-performance power conversion systems such as server and telecom SMPS, industrial power supplies, and PFC (Power Factor Correction) stages.
Keywords: Superjunction MOSFET, Low R DS(on), High-Efficiency Power Conversion, High Switching Performance, CoolMOS™ E6
