onsemi FCH104N60F Super-Junction MOSFET: Datasheet, Application Circuit, and Pinout Explanation
The onsemi FCH104N60F stands as a prominent member of the Super-Junction MOSFET family, engineered to deliver high efficiency and robustness in demanding power conversion applications. This N-channel MOSFET is characterized by its low on-resistance and fast switching performance, making it an ideal choice for switch-mode power supplies (SMPS), power factor correction (PFC) stages, and motor control circuits.
Datasheet Overview and Key Specifications
The FCH104N60F's datasheet provides critical parameters that define its operational limits and performance. The device boasts a drain-to-source voltage (Vds) of 650V, ensuring reliable operation in high-voltage environments. A standout feature is its exceptionally low typical on-resistance (Rds(on)) of 104mΩ at 10V gate drive, which directly translates to reduced conduction losses and higher overall system efficiency. Furthermore, it offers a continuous drain current (Id) rating of 16A at 25°C. Designers must pay close attention to the maximum power dissipation and the SOA (Safe Operating Area) graphs to ensure reliable operation under all conditions, including switching and linear modes.
Pinout Explanation
The FCH104N60F is offered in the industry-standard TO-220F-4L package. This 4-pin, fully isolated package offers superior creepage and clearance distances and eliminates the need for an insulating washer, simplifying the assembly process. The pinout is as follows:
Pin 1 (Gate): This is the control pin. A voltage applied between the Gate and Source pins controls the flow of current between the Drain and Source.
Pin 2 (Drain): The main load current flows into the MOSFET through this pin.
Pin 3 (Drain): This pin is internally connected to Pin 2 (Drain). Connecting both pins to the PCB helps in reducing the thermal resistance by providing a larger copper area for heat dissipation.
Pin 4 (Source): The main load current flows out of the MOSFET through this pin. It serves as the common reference point for the gate control signal.
Application Circuit Example: A PFC Boost Converter
A classic application for the FCH104N60F is in the critical Power Factor Correction (PFC) stage of an AC-DC power supply. The primary goal is to shape the input current to be in phase with the input voltage, improving the power factor.
In a typical boost converter topology used for PFC:
1. The AC input is rectified by a bridge rectifier.
2. The FCH104N60F acts as the main switching device, controlled by a dedicated PFC controller IC (e.g., onsemi NCP1615).
3. The controller drives the Gate pin with a pulse-width modulated (PWM) signal.
4. When the MOSFET is on, current builds up in the inductor. When it turns off, the inductor's collapsing magnetic field forces current through the diode, charging the bulk capacitor to a voltage higher than the peak input AC voltage.
5. The low Rds(on) of the FCH104N60F minimizes energy lost as heat during the on-time, while its fast switching speed allows for high-frequency operation, reducing the size of magnetic components.
The onsemi FCH104N60F is a high-performance Super-Junction MOSFET that excels in efficiency and thermal management. Its 650V voltage rating and exceptionally low on-resistance make it a superior component for high-power, high-frequency designs like server PSUs and industrial motor drives. The fully isolated TO-220F-4L package offers both design flexibility and reliability, solidifying its position as a top-tier solution for modern power electronics.
Keywords: Super-Junction MOSFET, Low On-Resistance, Power Factor Correction (PFC), TO-220F-4L Package, 650V Rating
