Infineon IPD85P04P4L-06: High-Performance P-Channel MOSFET for Automotive and Industrial Applications

The demand for robust and efficient power management solutions in automotive and industrial sectors continues to escalate, driven by the proliferation of electronic systems and the transition towards electrification. Addressing this need, the Infineon IPD85P04P4L-06 stands out as a high-performance P-Channel MOSFET engineered to deliver superior reliability and efficiency in demanding environments.

This MOSFET is characterized by its exceptionally low on-state resistance (RDS(on)) of just 8.5 mΩ at a gate-source voltage of -10 V. This low resistance is critical for minimizing conduction losses, which directly translates to higher system efficiency and reduced heat generation. Such performance is vital in applications like load switching, motor control, and power distribution units, where energy savings and thermal management are paramount.

A key highlight of the IPD85P04P4L-06 is its advanced OptiMOS™ technology, which provides an optimal balance between low switching losses and high avalanche ruggedness. This technology ensures the device can handle high energy pulses, making it exceptionally durable in harsh operating conditions. Furthermore, the MOSFET is AEC-Q101 qualified, underscoring its suitability for automotive applications that must endure extreme temperatures, vibrations, and other stressors. Its lead-free and halogen-free design also aligns with modern environmental regulations.

The device’s P-Channel configuration offers significant advantages in circuit design, particularly in high-side switching applications. It simplifies drive circuitry by allowing direct control from logic-level signals, reducing component count and board space. This is especially beneficial in space-constrained automotive modules and compact industrial systems.

Packaged in the space-efficient PG-TDSON-8, the IPD85P04P4L-06 combines high power density with excellent thermal performance. This package ensures efficient heat dissipation, enabling the MOSFET to operate reliably at high currents without derating.

ICGOOODFIND: The Infineon IPD85P04P4L-06 is a top-tier P-Channel MOSFET that sets a high standard for power efficiency, robustness, and integration ease. Its exceptional RDS(on), automotive-grade qualification, and advanced packaging make it an ideal choice for next-generation automotive and industrial power systems.

Keywords:

P-Channel MOSFET

Low RDS(on)

Automotive Grade

OptiMOS™ Technology

High-Side Switching