Infineon BSC018NE2LS: Datasheet, Application Notes, and Technical Specifications

The Infineon BSC018NE2LS stands as a prime example of advanced power semiconductor technology, designed to meet the rigorous demands of modern high-efficiency power conversion systems. This component is a N-channel OptiMOS™ 25 V power MOSFET, a product of Infineon's proprietary process technology that sets a benchmark in the industry for low on-state resistance and high switching performance.

Technical Specifications and Key Features

At the heart of the BSC018NE2LS's performance is its exceptionally low typical on-state resistance (RDS(on)) of just 1.8 mΩ at a gate-source voltage of 10 V. This ultra-low resistance is critical for minimizing conduction losses, which directly translates into higher efficiency and reduced heat generation in applications. The device is housed in a SuperSO8 package, which offers an excellent power-to-size ratio and superior thermal characteristics compared to standard SO-8 packages.

Key specifications include:

Drain-Source Voltage (VDS): 25 V

Continuous Drain Current (ID): 100 A at 25°C case temperature

Max. RDS(on): 1.95 mΩ (VGS = 10 V)

Gate Threshold Voltage (VGS(th)): typically 1.55 V

Total Gate Charge (Qg): typically 44 nC

These parameters make it an ideal choice for handling high currents in a very compact form factor.

Primary Applications and Usage

The BSC018NE2LS is predominantly engineered for synchronous rectification in switched-mode power supplies (SMPS), particularly in high-current, low-voltage output stages like those found in server and telecom power units. Its fast switching speed and low gate charge also make it exceptionally suitable for:

DC-DC converter circuits (both buck and boost topologies)

Motor control and drive systems

Battery management and protection circuits

High-current load switching in industrial equipment

Application Notes and Design Considerations

Successful implementation of this MOSFET requires careful attention to board layout and driving conditions. Proper gate driving is paramount; a dedicated gate driver IC is highly recommended to provide the necessary peak current to quickly charge and discharge the MOSFET's input capacitance, ensuring swift transitions and minimizing switching losses.

The PCB layout must minimize parasitic inductance, especially in the high-current loop and the gate drive path. This involves using short, wide traces, generous use of ground planes, and placing decoupling capacitors as close as possible to the drain and source terminals of the MOSFET. Furthermore, effective thermal management is crucial. Despite its low RDS(on), the high current handling can generate significant heat. Designers must ensure adequate cooling through thermal vias, heatsinks, or sufficient copper area on the PCB to dissipate heat and maintain the junction temperature within safe operating limits.

Conclusion and Summary

ICGOODFIND: The Infineon BSC018NE2LS is a high-performance power MOSFET that delivers an outstanding combination of ultra-low on-state resistance, high current capability, and fast switching performance in a compact SuperSO8 package. It is an optimal solution for designers aiming to maximize efficiency and power density in demanding applications like server PSUs, advanced DC-DC converters, and various power management systems.

Keywords: Power MOSFET, Low RDS(on), Synchronous Rectification, DC-DC Converter, Thermal Management.